| 1. | Influence of fe doping concentration on some properties of semi - insulating inp
掺铁浓度对半绝缘磷化铟的一些性质的影响 |
| 2. | In the second one , we firstly compared two kinds of solar cells in industry and analyzed their junction depth and doping concentration
第二部分研究了p - n结及铝背场对太阳电池特性的影响。 |
| 3. | It is found that with the increase of ho3 + doped concentration , the highest luminescence peaks at the blue band shift towards long wavelength
随着ho ~ ( 3 + )掺杂浓度的变化，蓝光段的主要荧光峰向长波方向移动。 |
| 4. | Effects of un - doped layer thickness , doped concentration and post - deposition annealing temperature of the complex layer on solar cells performance have been studies
着重研究了复合层中本征层厚度、掺铜浓度和后处理温度对太阳电池性能的影响。 |
| 5. | The research of the effect of soi s - resurf included the impact of the geometry parameters and drift doping concentration on breakdown voltage and on - resistance
Soisingle - resurf效应研究。研究了soisingle - resurfldmos的器件参数对击穿电压和导通电阻的影响。 |
| 6. | On the other hand , relationship between doping concentration , phase transition temperature , magnitude of resistance change and hysteresis width was investigated
在此基础上,本文进一步探讨了掺杂浓度与vo _ 2薄膜相变温度、电阻突变数量级以及热滞宽度的关系。 |
| 7. | Meanwhile , the influence of doping on oleds and the mechanism of doped oleds were investigated intensely . it is found that there exists a correspondent relation between doping concentration and luminescence phenomena
掺入的染料由客发光体变成了主发光体，并存在从客发光体向主发光体的能量传递和电荷转移。 |
| 8. | Based on the requirement of the device , we grow the films of silicon of high quality . the thickness of the epilayer is from 0 . 4 u m tol p m , the doping concentration can be controlled conveniently
然后，根据器件的要求，利用uhv cvd技术，生长出优质薄硅外延片，其厚度在0 . 4 m 1 m ，掺杂浓度可任意调节，晶体质量良好。 |
| 9. | The coupling between cr atoms in the system with two cr atoms considered is found to be ferromagnetic , and the magnetic moment per cr atom is similar to the case in which only one cr atom is considered in the same doping concentration
在包含两个cr原子的体系中cr原子之间是铁磁性偶合,每个cr原子的磁矩与相同浓度下掺杂一个cr原子的磁矩相近。 |
| 10. | Formula of gain has been developed by rate equations , several factors , such as doped concentration of er3 + - yb3 + , configuration of waveguide amplifiers and pump power etc , have been analyzed to increase gain
由速率方程得出光波导放大器的增益公式,分析影响放大器增益的各个因素。主要从铒镱离子的掺杂浓度,放大器的结构及泵浦功率三方面加以讨论。 |
